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- دیتاشیت BD682STU
BD682STU دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | BD682STU |
|---|---|
| حجم فایل | 70.016 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 6 |
دانلود دیتاشیت BD682STU |
دانلود دیتاشیت |
|---|
سایر مستندات
BD676(A), 78(A), 80(A), 82(T) 4 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi BD682STU
- Transistor Type: PNP
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 4A
- Power Dissipation (Pd): 14W
- Transition Frequency (fT): -
- DC Current Gain (hFE@Ic,Vce): 750@1.5A,3V
- Collector Cut-Off Current (Icbo): 200uA
- Collector-Emitter Breakdown Voltage (Vceo): 100V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 2.5V@1.5A,30mA
- Package: TO-126
- Manufacturer: onsemi
- Series: -
- Packaging: Bulk
- Part Status: Active
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
- Power - Max: 14W
- Frequency - Transition: -
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126-3
- Base Part Number: BD682
- detail: Bipolar (BJT) Transistor PNP - Darlington 100V 4A 14W Through Hole TO-126-3